InGaN-based light-emitting diodes with an embedded conical air-voids structure

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InGaN-based light-emitting diodes with an embedded conical air-voids structure.

The conical air-void structure of an InGaN light-emitting diode (LEDs) was formed at the GaN/sapphire interface to increase the light extraction efficiency. The fabrication process of the conical air-void structure consisted of a dry process and a crystallographic wet etching process on an undoped GaN layer, followed by a re-growth process for the InGaN LED structure. A higher light output powe...

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ژورنال

عنوان ژورنال: Optics Express

سال: 2010

ISSN: 1094-4087

DOI: 10.1364/oe.19.000a57